Thin Film Deposition of MoP, a Topological Semimetal

Abstract

MoP is a topological semimetal which has drawn attention due to its unique electrical and optical properties resulting from massless electrons. In order to utilize these properties for practical applications, it is necessary to develop a technique to produce high-quality, large-scale thin films of this 2D material. We report below our initial results of growth of MoP thin films using atomic layer deposition (ALD), where the film grows layer-by-layer. These films were grown on 5 cm × 5 cm silicon oxide coated Si wafers. Resistivity versus temperature measurements show that these films are metallic and includes a partial superconducting phase. The magnetoresistances of both the longitudinal and Hall currents measured at 1.8 K show a strong effect of the magnetic field on the resistivity. Density functional theory was employed to determine the lattice constants of the MoP crystal. These parameters were in good agreement with those obtained from the Rietveld fit to the XRD spectrum of the films.