Oxygen Defects Containing TiN Films for the Hydrogen Evolution Reaction: A Robust Thin-Film Electrocatalyst with Outstanding Performance

Abstract

Density functional theory (DFT) calculations of hydrogen adsorption on titanium nitride had previously shown that hydrogen may adsorb on both titanium and nitrogen sites with a moderate adsorption energy. Further, the diffusion barrier was also found to be low. These findings may qualify TiN, a versatile multifunctional material with electronic conductivity, as an electrode material for the hydrogen evolution reaction (HER). This was the main impetus of this study, which aims to experimentally and theoretically investigate the electrocatalytic properties of TiN layers that were processed on a Ti substrate using reactive ion sputtering. The properties are discussed, focusing on the role of oxygen defects introduced during the sputtering process on the HER. Based on DFT calculations, it is shown that these oxygen defects alter the electronic environment of the Ti atoms, which entails a low hydrogen adsorption energy in the range of −0.1 eV; this leads to HER performances that match those of Pt-NPs in acidic media. When a few nanometer-thick layers of Pd-NPs are sputtered on top of the TiN layer, the performance is drastically reduced. This is interpreted in terms of oxygen defects being scavenged by the Pd-NPs near the surface, which is thought to reduce the hydrogen adsorption sites.