Influence of Hf Doping on the Oxygen Behaviors on ZrCo(110) Surface Using First-Principles Calculation

Abstract

ZrCo alloy is easily poisoned by impurity gases such as O2, CO, and CO2, resulting in a deterioration in hydrogen storage performance. In this study, we conducted a comprehensive investigation into the adsorption and dissociation characteristics of oxygen on the ZrCo(110) surface using first-principles calculations. Previous studies indicated that the anti-disproportionation properties of ZrCo alloy can be significantly improved by Hf substitution, but the effect of Hf doping on the anti-poisoning properties has not been reported. We also examined the effect of Hf doping on the adsorption, dissociation, and diffusion characteristics of oxygen. It is found that on the ZrCo(110) surface, O2 molecules are easily dissociated and then stably adsorbed at the hollow site. Oxygen atoms will fill the surface preferentially and then diffuse inward. The doping of Hf has an insignificant impact on the adsorption or dissociation behavior of oxygen in comparison to the pure ZrCo surface. However, a notable observation is that the doping of Hf resulted in a reduction in the diffusion barrier for oxygen from the surface to the subsurface by 0.61 eV. Consequently, our study suggests that doping Hf is not an advisable strategy for improving the ZrCo(110) surface’s resistance to O2 poisoning because of improved oxygen permeability.