Latest Advancements in Next-Generation Semiconductors: Materials and Devices for Wide Bandgap and 2D Semiconductors-Reference-Cited by-同舟云学术

Latest Advancements in Next-Generation Semiconductors: Materials and Devices for Wide Bandgap and 2D Semiconductors

Published:2023-10-27 Issue:11 Volume:14 Page:1992
ISSN:2072-666X
Container-title:Micromachines
language:en
Short-container-title:Micromachines

Author:

Wang Zeheng¹^ORCID,Huang Jing-Kai²³^ORCID

Affiliation:

1. Manufacturing, CSIRO, Lindfield, NSW 2070, Australia

2. Department of Systems Engineering, City University of Hong Kong, Kowloon, Hong Kong

3. School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia

Abstract

Semiconductor materials, devices, and systems have become indispensable pillars supporting the modern world, deeply ingrained in various facets of our daily lives [...]

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering

Link

https://www.mdpi.com/2072-666X/14/11/1992/pdf

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4. Huang, J.-K., Wan, Y., Shi, J., Zhang, J., Wang, Z., Yang, Z.-L., Huang, B.-C., Chiu, Y.-P., Wang, W., and Yang, N. (2022, January 3–7). Crystalline Complex Oxide Membrane: Sub-1 Nm CET Dielectrics for 2D Transistors. Proceedings of the 2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA .

5. Jellybean Quantum Dots in Silicon for Qubit Coupling and On-Chip Quantum Chemistry;Wang;Adv. Mater.,2023

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