Effect of LaCoO3 Synthesized via Solid-State Method on the Hydrogen Storage Properties of MgH2

Author:

Sazelee Noratiqah1ORCID,Md Din Muhamad Faiz2ORCID,Ismail Mohammad1ORCID,Rather Sami-Ullah3ORCID,Bamufleh Hisham S.3,Alhumade Hesham3ORCID,Taimoor Aqeel Ahmad3,Saeed Usman3ORCID

Affiliation:

1. Energy Storage Research Group, Faculty of Ocean Engineering Technology and Informatics, University Malaysia Terengganu, Kuala Terengganu 21030, Malaysia

2. Department of Electrical and Electronic Engineering, Faculty of Engineering, National Defence University of Malaysia, Kem Sungai Besi, Kuala Lumpur 57000, Malaysia

3. Department of Chemical and Materials Engineering, King Abdulaziz University, P.O. Box 80204, Jeddah 21589, Saudi Arabia

Abstract

One of the ideal energy carriers for the future is hydrogen. It has a high energy density and is a source of clean energy. A crucial step in the development of the hydrogen economy is the safety and affordable storage of a large amount of hydrogen. Thus, owing to its large storage capacity, good reversibility, and low cost, Magnesium hydride (MgH2) was taken into consideration. Unfortunately, MgH2 has a high desorption temperature and slow ab/desorption kinetics. Using the ball milling technique, adding cobalt lanthanum oxide (LaCoO3) to MgH2 improves its hydrogen storage performance. The results show that adding 10 wt.% LaCoO3 relatively lowers the starting hydrogen release, compared with pure MgH2 and milled MgH2. On the other hand, faster ab/desorption after the introduction of 10 wt.% LaCoO3 could be observed when compared with milled MgH2 under the same circumstances. Besides this, the apparent activation energy for MgH2–10 wt.% LaCoO3 was greatly reduced when compared with that of milled MgH2. From the X-ray diffraction analysis, it could be shown that in-situ forms of MgO, CoO, and La2O3, produced from the reactions between MgH2 and LaCoO3, play a vital role in enhancing the properties of hydrogen storage of MgH2.

Funder

Institutional Fund Projects

Publisher

MDPI AG

Subject

General Materials Science

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