Preparation and Research of Monolayer WS2 FETs Encapsulated by h-BN Material

Abstract

Functional devices that use vertical van der Waals (vdWs) heterostructure material can effectively combine the properties of single component materials, and the strong interlayer coupling effect can change their electronic and optical properties. According to our research, WS2/h-BN vertical vdWs heterostructure material can be synthesized by chemical vapor deposition (CVD) and wet transfer methods. Monolayer WS2 material and WS2/h-BN vertical vdWs heterostructure material can be tested and characterized using XPS, SEM, EDS, AFM and Raman spectroscopy, which can prove the existence of corresponding materials. When the thickness of the material decreases, the Coulomb scattering amongst two-dimensional (2D) layered materials increases. This is because both the shielding effect and the distance between the channel and the interface layer decrease. FET devices are then fabricated on WS2/h-BN vdWs heterostructure material by the electron beam lithography and evaporation processes. The effects of vdWs epitaxy on electrical transmission when WS2/h-BN vdWs heterostructure material is formed are explored. Finally, the related electrical performance of FET devices is tested and analyzed. Our experimental research provides guidance for the use of electronic devices with vdWs heterostructure material.