Lithium-Ion Glass Gating of HgTe Nanocrystal Film with Designed Light-Matter Coupling

Author:

Pierini Stefano1ORCID,Abadie Claire12ORCID,Dang Tung Huu1,Khalili Adrien1ORCID,Zhang Huichen1,Cavallo Mariarosa1,Prado Yoann1,Gallas Bruno1,Ithurria Sandrine3,Sauvage Sébastien4ORCID,Dayen Jean Francois56,Vincent Grégory2,Lhuillier Emmanuel1

Affiliation:

1. Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France

2. ONERA-The French Aerospace Lab, 6 Chemin de la Vauve aux Granges, 91123 Palaiseau, France

3. Laboratoire de Physique et d’Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université, CNRS, 10 Rue Vauquelin, 75005 Paris, France

4. CNRS, Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, 91120 Palaiseau, France

5. IPCMS-CNRS, Université de Strasbourg, 23 Rue du Loess, 67034 Strasbourg, France

6. Institut Universitaire de France, 1 Rue Descartes, CEDEX 05, 75231 Paris, France

Abstract

Nanocrystals’ (NCs) band gap can be easily tuned over the infrared range, making them appealing for the design of cost-effective sensors. Though their growth has reached a high level of maturity, their doping remains a poorly controlled parameter, raising the need for post-synthesis tuning strategies. As a result, phototransistor device geometry offers an interesting alternative to photoconductors, allowing carrier density control. Phototransistors based on NCs that target integrated infrared sensing have to (i) be compatible with low-temperature operation, (ii) avoid liquid handling, and (iii) enable large carrier density tuning. These constraints drive the search for innovative gate technologies beyond traditional dielectric or conventional liquid and ion gel electrolytes. Here, we explore lithium-ion glass gating and apply it to channels made of HgTe narrow band gap NCs. We demonstrate that this all-solid gate strategy is compatible with large capacitance up to 2 µF·cm−2 and can be operated over a broad range of temperatures (130–300 K). Finally, we tackle an issue often faced by NC-based phototransistors:their low absorption; from a metallic grating structure, we combined two resonances and achieved high responsivity (10 A·W−1 or an external quantum efficiency of 500%) over a broadband spectral range.

Funder

ERC grant blackQD

Ne2Dem

AQDtive

Region Ile-de-France

French state funds

Labex NIE

Cluster of Excellence MATISSE and also by the grant IPER-Nano2

Copin

Frontal

Graskop

NITQuantum

Bright

MixDferro

Quicktera

Publisher

MDPI AG

Subject

General Materials Science

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