Electrical Properties of Aluminum Nitride Thick Films Magnetron Sputtered on Aluminum Substrates

Abstract

The realization of a c-axis oriented aluminum nitride thick film on aluminum substrates is a promising step in the development of transducers for applications with a working temperature up to about 600 °C. The present paper deals with the realization of AlN thick films by means of reactive magnetron sputtering with a pulsed DC power supply, operating in continuous mode for 50 h. Two values (0.4 and 0.8) of nitrogen concentration were used; operative pressure and power were set at 0.3 Pa and 150 W, respectively. The thickness of the obtained aluminum nitride films on the aluminum substrate, assessed with a profilometer, varied from 20 to 30 µm. The preferential orientation of AlN crystals was verified by X-ray diffraction. Finally, as the main focus of the investigation, the films underwent electrical characterization by means of an LCR-meter used on a parallel plate capacitor set-up and a test system based on a cantilever beam configuration. AlN conductivity and ε33 permittivity were derived in the 100 Hz–300 kHz frequency range. Magnetron sputtering operation with nitrogen concentration equal to 0.4 resulted in the preferred operative condition, leading to a d31 piezoelectric coefficient, in magnitude, of 0.52 × 10−12 C/N.