Affiliation:
1. School of Microelectronics, Shanghai University, Shanghai 201800, China
2. The Shanghai Industrial μTechnology Research Institute, Shanghai 201899, China
Abstract
This paper proposes a temperature sensor based on temperature-frequency conversion using 180 nm CMOS technology. The temperature sensor consists of a proportional-to-absolute temperature (PTAT) current generating circuit, a relaxation oscillator with oscillation frequency proportional to temperature (OSC-PTAT), a relaxation oscillator with oscillation frequency independent of temperature (OSC-CON), and a divider circuit cascaded with D flip-flops. Using BJT as the temperature sensing module, the sensor has the advantages of high accuracy and high resolution. An oscillator that uses PTAT current to charge and discharge capacitors to achieve oscillation, and utilizes voltage average feedback (VAF) to enhance the frequency stability of the oscillator is tested. Through the dual temperature sensing process with the same structure, the influence of variables such as power supply voltage, device, and process deviation can be reduced to a certain extent. The temperature sensor in this paper was implemented and tested with a temperature measurement range of 0–100 °C, an inaccuracy of +0.65 °C/−0.49 °C after two-point calibration, a resolution of 0.003 °C, a resolution Figure of Merit (FOM) of 6.7 pJ/K2, an area of 0.059 mm2, and a power consumption of 32.9 μW.
Funder
National Key R&D Program of China
Subject
Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry
Reference26 articles.
1. Time Moore: Exploiting Moore’s Law from The Perspective of Time;Xiu;IEEE Solid-State Circuits Mag.,2019
2. Samake, A., Kocanda, P., and Kos, A. (2016, January 5–7). A New Idea of Effective Cooling of Integrated Circuits. Proceedings of the 2016 International Conference on Signals and Electronic Systems (ICSES), Krakow, Poland.
3. Analysis of Temperature Distribution in Stacked IC With On-Chip Sensing Device Arrays;Matsuda;IEEE Trans. Semicond. Manufact.,2015
4. A CMOS Temperature Sensor with a Voltage-Calibrated Inaccuracy of ±0.15 °C (3σ) from −55 °C to 125 °C;Souri;IEEE J. Solid-State Circuits,2013
5. Thick-Film Thermistor and Its Applications;Ikegami;IEEE Trans. Comp. Hybrids Manufact. Technol.,1980