The Effect of Interlayer Microstructure on the Thermal Boundary Resistance of GaN-on-Diamond Substrate

Abstract

Diamond has the highest thermal conductivity of any natural material. It can be used to integrate with GaN to dissipate heat from AlGaN/GaN high electron mobility transistor (HEMT) channels. Much past work has investigated the thermal properties of GaN-on-diamond devices, especially the thermal boundary resistance between the diamond and GaN (TBReff,Dia/GaN). However, the effect of SiNx interlayer structure on the thermal resistance of GaN-on-diamond devices is less investigated. In this work, we explore the role of different interfaces in contributing to the thermal boundary resistance of the GaN-on-diamond layers, specifically using 100 nm layer of SiNx, 80 nm layer of SiNx, 100 nm layer of SiNx with a 20 nm × 20 nm periodic structure. Through combination with time-domain thermoreflectance measurement and microstructural analysis, we were able to determine that a patterning SiNx interlayer provided the lower thermal boundary resistance (32.2 ± 1.8 m2KGW−1) because of the diamond growth seeding and the diamond nucleation surface. In addition, the patterning of the SiNx interlayer can effectively improve the interface bonding force and diamond nucleation density and reduce the thermal boundary resistance of the GaN-on-diamond. This enables significant improvement in heat dissipation capability of GaN-on-diamond with respect to GaN wafers.