Fabrication of a UV Photodetector Based on n-TiO2/p-CuMnO2 Heterostructures

Abstract

The heterojunction based on n-TiO2 nanolayer/p-CuMnO2 thin film was achieved using an efficient two-step synthesis process for the fabrication of a UV photodetector. The first step consisted of obtaining the TiO2 nanolayer, which was grown on titan foil by thermal oxidation (Ti-TiO2). The second step consisted of CuMnO2 thin film deposition onto the surface of Ti-TiO2 using the Doctor Blade method. Techniques such as X-ray diffraction, UV-VIS analysis, SEM, and AFM morphologies were used for the investigation of the structural and morphological characteristics of the as-synthesized heterostructures. The Mott–Schottky analysis was performed in order to prove the n-TiO2/p-CuMnO2 junction. The I-V measurements of the n-TiO2 nanolayer/p-CuMnO2 thin film heterostructure confirm its diode characteristics under dark state, UV and visible illumination conditions. The obtained heterojunction, which is based on two types of semiconductors with different energy band structures, improves the separating results of charges, which is very important for high-performance UV photodetectors.