Preparation of In/Sn Nanoparticles (In3Sn and InSn4) by Wet Chemical One-Step Reduction and Performance Study

Author:

Deng Huaming,Wang Kaijun,Duan Yunbiao,Zhang Weijun,Hu Jin

Abstract

The preparation of binary alloys by surfactant-assisted chemical reduction in aqueous solution at room temperature has become a hot topic. In this article low melting point tin/indium (Sn/In) nanoparticles are synthesized. The formation process of the alloy was studied. Scanning electron microscopy, energy spectrometry, and X-ray diffraction are used to determine the morphology, composition, and crystal structure of the nanoparticles. Study found that fully alloyed indium-tin nanoparticles can be obtained by wet chemical method and the main phases of indium-tin alloy are β-phase (In3Sn) and γ-phase (InSn4). However, the Sn phase appears at a low content of indium (40 wt%). When the content of indium increases to 45 (wt%), the tin phase disappears. In addition, the most important finding is that the composition of the indium-tin alloy can be changed by ratio control, and the content of In3Sn increases with the increase of indium content. The relative content of In3Sn attains a maximum when the content of indium increases to 60 (wt%). In contrast, the content of InSn4 decreases. Finally, differential scanning calorimetry measurements is performed to understand the melting behavior of the nanoparticles and low melting temperatures are achieved for a wide range of indium compositions (from 40% to 60%). The melting temperature is found to be in the range of 125–132 °C and it increased with increasing In3Sn (also the increase of indium content). This gives us a new understanding into the binary alloy nano-system and gives important information for the application of low temperature alloy solders. The choice of composition can be based on the corresponding melting point.

Funder

Analysis and Test Center, Kunming University of Science and Technology

Publisher

MDPI AG

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces

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