Contamination of Substrate-Coating Interface Caused by Ion Etching

Abstract

In–situ cleaning of the substrate surface by ion etching is an integral part of all physical vapor deposition (PVD) processes. However, in industrial deposition systems, some side effects occur during the ion etching process that can cause re-contamination. For example, in a magnetron sputtering system with several sputter sources and with a substrate holder located centered between them, the ion etching causes the contamination of the unshielded target surfaces with the batching material. In the initial stage of deposition, this material is redeposited back on the substrate surface. The identification of the contamination layer at the substrate–coating interface is difficult because it contains both substrate and coating elements. To avoid this problem, we prepared a TiAlN double coating in two separate production batches on the same substrate. In such a double-layer TiAlN hard coating, the contamination layer, formed during the ion etching before the second deposition, is readily identifiable, and analysis of its chemical composition is easy. Contamination of the batching material was observed also on seed particles that caused the formation of nodular defects. We explain the origin of these particles and the mechanism of their transfer from the target surface to the substrate surface. By comparison of the same coating surface area after deposition of the first and second TiAlN layers, the changes in coating topography were analyzed. We also found that after the deposition of the second TiAlN coating, the surface roughness slightly decreased, which we explain by the planarization effect.