Mid-Infrared (MIR) Complex Refractive Index Spectra of Polycrystalline Copper-Nitride Films by IR-VASE Ellipsometry and Their FIB-SEM Porosity

Author:

Márquez Emilio1,Blanco Eduardo1ORCID,Mánuel José M.1ORCID,Ballester Manuel2,García-Gurrea Marcos1,Rodríguez-Tapiador María I.3ORCID,Fernández Susana M.3ORCID,Willomitzer Florian4,Katsaggelos Aggelos K.5

Affiliation:

1. Department of Condensed-Matter Physics, Faculty of Science, University of Cadiz, 11510 Puerto Real, Spain

2. Department of Computer Sciences, Northwestern University, 633 Clark St., Evanston, IL 60208, USA

3. Renewable Energy Department, CIEMAT, Avenida Complutense 40, 28040 Madrid, Spain

4. Wyant College of Optical Sciences, University of Arizona, Tucson, AZ 85721, USA

5. Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208, USA

Abstract

Copper-nitride (Cu3N) semiconductor material is attracting much attention as a potential, next-generation thin-film solar light absorber in solar cells. In this communication, polycrystalline covalent Cu3N thin films were prepared using reactive-RF-magnetron-sputtering deposition, at room temperature, onto glass and silicon substrates. The very-broadband optical properties of the Cu3N thin film layers were studied by UV-MIR (0.2–40 μm) ellipsometry and optical transmission, to be able to achieve the goal of a low-cost absorber material to replace the conventional silicon. The reactive-RF-sputtered Cu3N films were also investigated by focused ion beam scanning electron microscopy and both FTIR and Raman spectroscopies. The less dense layer was found to have a value of the static refractive index of 2.304, and the denser film had a value of 2.496. The iso-absorption gap, E04, varied between approximately 1.3 and 1.8 eV and could be considered suitable as a solar light absorber.

Publisher

MDPI AG

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces

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