Temperature-Controlled and Adjustable Terahertz Device Based on Vanadium Dioxide

Abstract

We propose a simple multifunctional terahertz absorber based on the simulation. The device consists of a gold layer, a SiO2 dielectric layer, and a VO2 top layer. The modulation mechanism of this device is to utilize the thermally induced phase transition characteristics of vanadium dioxide material. The simulation results show that when the temperature is 312 K, the device has the effect of complete reflection of terahertz waves. When the temperature is 345 K, the device has almost perfect absorption of terahertz wave in the range of 4.7–9.7 THz, and the spectral absorptivity is modulated in the range of 0~0.999. The electric field conditions at different temperatures were plotted to further explain the reasons for the performance transition of the device. The terahertz device was explained using impedance matching theory. In addition, the influence of different structural parameters on absorption rate was studied, providing reference for practical applications. At the same time, the device is polarization-insensitive and insensitive to the incident angle. When the incident angle changes from 0°to 45°, the device still has a stable absorption effect. The device has great application prospects in terahertz stealth, modulation, and other fields and provides ideas for the design of related devices.