High-Entropy Oxides: Advanced Research on Electrical Properties

Abstract

The concept of “high entropy” was first proposed while exploring the unknown center of the metal alloy phase diagram, and then expanded to oxides. The colossal dielectric constant found on the bulk high-entropy oxides (HEOs) reveals the potential application of the high-entropy oxides in the dielectric aspects. Despite the fact that known HEO thin films have not been reported in the field of dielectric properties so far, with the high-entropy effects and theoretical guidance of high entropy, it is predictable that they will be discovered. Currently, researchers are verifying that appropriately increasing the oxygen content in the oxide, raising the temperature and raising the pressure during preparation have an obvious influence on thin films’ resistivity, which may be the guidance on obtaining an HEO film large dielectric constant. Finally, it could composite a metal–insulator–metal capacitor, and contribute to sensors and energy storage devices’ development; alternatively, it could be put into application in emerging thin-film transistor technologies, such as those based on amorphous metal oxide semiconductors, semiconducting carbon nanotubes, and organic semiconductors.