Effects of Substrates on the Electrical Performance of PbZr0.52Ti0.48O3 Films

Abstract

Flexible PbZr0.52Ti0.48O3 (PZT) films have a wide application prospect in wearable devices. In this work, PZT films were fabricated on LaNiO3–based Si substrates and mica substrates, respectively. The effects of Si substrates and mica substrates on the dielectric and ferroelectric properties of PZT films were studied. The stability of PZT films on different substrates was discussed by controlling temperature and frequency. The optimal annealing temperature for preparing PZT films on LaNiO3–based Si substrates and mica substrates is 750 °C. The dielectric and ferroelectric properties of PZT films vary with the substrates. The diffraction peak of PZT films deposited on mica substrates shifted to the left compared with that deposited on Si substrates, due to difference of the expansion coefficients. The as–prepared PZT films exhibit a good ferroelectric property at a frequency in the range of 100 Hz~1000 Hz. Moreover, PZT films deposited on mica substrates have larger remanent polarization values and coercive fields than PZT films deposited on Si substrates. With the elevation in temperature, the dielectric constant of PZT films gradually enhance. And as–prepared PZT films at an annealing temperature of 750 °C have a better dielectric temperature stability. PZT films grown on Si substrates exhibit more excellent dielectric temperature stability than that of PZT films grown on mica substrates.