An Improved Quasi-Z-Source Boost DC-DC Converter Using Single-Stage Switched-Inductor Boosting Technique

Abstract

A modified single-stage Quasi-Z-Source (QZS) boost DC-DC converter using a single MOSFET switch with a single-stage switched-inductor (SI) network is proposed in this paper. The DC-DC converter proposed in this study provides an extra voltage gain compared to the traditional QZS DC-DC converter. An additional capacitor and diode circuit are added to the existing QZS converter to decrease the voltage stress on the MOSFET switch. Therefore, compared to the traditional QZS boost converter, the proposed Modified QZS (MQZS) converter provides large voltage gain under a low duty ratio, less voltage stress, and continuous input current. Moreover, the reliability and the conversion efficiency can be increased. The derivation of the proposed MQZS converter and its operation, selection of parameters, and comparison with another similar converter are discussed in this paper. Lastly, the simulation and experimental results are illustrated to prove the notional deliberations of the proposed MQZS converter.