High Positive MR and Energy Band Structure of RuSb2+

Abstract

A high positive magnetoresistance (MR), 78%, is observed at 2 K on the ab plane of the diamagnetic RuSb2+ semiconductor. On the ac plane, MR is 44% at 2 K, and about 7% at 300 K. MR at different temperatures do not follow the Kohler’s rule. It suggests that the multiband effect plays a role on the carrier transportation. RuSb2+ is a semiconductor with both positive and negative carriers. The quantum interference effect with the weak localization correction lies behind the high positive MR at low temperature. Judged from the ultraviolet–visible spectra, it has a direct band gap of 1.29 eV. The valence band is 0.39 eV below the Fermi energy. The schematic energy band structure is proposed based on experimental results.