Abstract
Micropillar arrays with radial p–n junctions are attractive for photovoltaic applications, because the light absorption and carrier collection become decoupled. The main challenge in manufacturing radial p–n junctions is achieving shallow (dopant depth <200 nm) and heavy doping (>1020 cm−3) that will allow the formation of a quasi-neutral region (QNR) and space charge region (SCR) in its tiny geometry. This experimental study investigates an approach that allows shallow and heavy doping in silicon micropillars. It aims to demonstrate that silicon dioxide (SiO2) can be used to control the dopant penetration depth in silicon micropillars.
Subject
Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science