Compact Modeling of Two-Dimensional Field-Effect Biosensors

Author:

Pasadas Francisco1ORCID,El Grour Tarek2,G. Marin Enrique1ORCID,Medina-Rull Alberto1,Toral-Lopez Alejandro1ORCID,Cuesta-Lopez Juan1ORCID,G. Ruiz Francisco1ORCID,El Mir Lassaad2ORCID,Godoy Andrés1ORCID

Affiliation:

1. Pervasive Electronics Advanced Research Laboratory (PEARL), Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, 18071 Granada, Spain

2. Laboratory of Physics of Materials and Nanomaterials Applied at Environment (LaPhyMNE) LR05ES14, Faculty of Sciences of Gabes, Gabes University, Erriadh City, Zrig, 6072 Gabes, Tunisia

Abstract

A compact model able to predict the electrical read-out of field-effect biosensors based on two-dimensional (2D) semiconductors is introduced. It comprises the analytical description of the electrostatics including the charge density in the 2D semiconductor, the site-binding modeling of the barrier oxide surface charge, and the Stern layer plus an ion-permeable membrane, all coupled with the carrier transport inside the biosensor and solved by making use of the Donnan potential inside the ion-permeable membrane formed by charged macromolecules. This electrostatics and transport description account for the main surface-related physical and chemical processes that impact the biosensor electrical performance, including the transport along the low-dimensional channel in the diffusive regime, electrolyte screening, and the impact of biological charges. The model is implemented in Verilog-A and can be employed on standard circuit design tools. The theoretical predictions obtained with the model are validated against measurements of a MoS2 field-effect biosensor for streptavidin detection showing excellent agreement in all operation regimes and leading the way for the circuit-level simulation of biosensors based on 2D semiconductors.

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. NITSRI-2D: A Surface Potential Based SPICE Compatible Model for pH-Sensitive FETs Based on 2-D Materials;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11

2. Graphene field-effect transistor TCAD tool for circuit design under freeware;2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD);2023-07-03

3. Advanced Field-Effect Sensors;Sensors;2023-05-08

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