Sapphire Selective Laser Etching Dependence on Radiation Wavelength and Etchant

Abstract

Transparent and high-hardness materials have become the object of wide interest due to their optical and mechanical properties; most notably, concerning technical glasses and crystals. A notable example is sapphire—one of the most rigid materials having impressive mechanical stability, high melting point and a wide transparency window reaching into the UV range, together with impressive laser-induced damage thresholds. Nonetheless, using this material for 3D micro-fabrication is not straightforward due to its brittle nature. On the microscale, selective laser etching (SLE) technology is an appropriate approach for such media. Therefore, we present our research on C-cut crystalline sapphire microprocessing by using femtosecond radiation-induced SLE. Here, we demonstrate a comparison between different wavelength radiation (1030 nm, 515 nm, 343 nm) usage for material modification and various etchants (hydrofluoric acid, sodium hydroxide, potassium hydroxide and sulphuric and phosphoric acid mixture) comparison. Due to the inability to etch crystalline sapphire, regular SLE etchants, such as hydrofluoric acid or potassium hydroxide, have limited adoption in sapphire selective laser etching. Meanwhile, a 78% sulphuric and 22% phosphoric acid mixture at 270 °C temperature is a good alternative for this process. We present the changes in the material after the separate processing steps. After comparing different processing protocols, the perspective is demonstrated for sapphire structure formation.