Microstructure and Dielectric Properties of Gradient Composite BaxSr1−xTiO3 Multilayer Ceramic Capacitors

Author:

Jili Xiaobing12,Gao Libin12,Chen Hongwei12,Zhang Jihua12

Affiliation:

1. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China

2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Abstract

Multilayer ceramic capacitors (MLCCs) prepared using Ba1−xSrxTiO3 (BST) ceramics exhibit high dielectric constants (~1000), low dielectric loss (<0.01), and high breakdown voltage, with particularly significant tunability in dielectric properties (>50%) and with poor temperature stability. Doping-dominated temperature stability improvements often result in unintended loss of dielectric properties. A non-doping method has been proposed to enhance the temperature stability of BST capacitors. The composite gradient multilayer (CGML) ceramic capacitors with BaxSr1−xTiO3, where 0.5 < x < 0.8, as the dielectric, were prepared using a tape-casting method and sintered at 1250 °C. There exists a dense microstructure and continuous interface between the BaxSr1−xTiO3 thick film and the Pt electrodes. CGML ceramic capacitors feature a high dielectric constant at 1270, a low dielectric loss of less than 0.007, and excellent frequency and temperature stability. The capacitor showcases remarkable dielectric properties with a substantial tunability of 68% at 100 kV/cm, along with a notably consistent tunability ranging from 20% to 28% at 15 kV/cm across temperatures spanning from 30 to 100 °C, outperforming single-component BST-MLCCs in dielectric performance.

Funder

the National Natural Science Foundation of China

Publisher

MDPI AG

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