Design and Performance Evaluation of a Deep Ultraviolet LED-Based Ozone Sensor for Semiconductor Industry Applications

Abstract

Ozone (O3) is a critical gas in various industrial applications, particularly in semiconductor manufacturing, where it is used for wafer cleaning and oxidation processes. Accurate and reliable detection of ozone concentration is essential for process control, ensuring product quality, and safeguarding workplace safety. By studying the UV absorption characteristics of O3 and combining the specific operational needs of semiconductor process gas analysis, a pressure-insensitive ozone gas sensor has been developed. In its optical structure, a straight-through design without corners was adopted, achieving a coupling efficiency of 52% in the gas chamber. This device can operate reliably in a temperature range from 0 °C to 50 °C, with only ±0.3% full-scale error across the entire temperature range. The sensor consists of a deep ultraviolet light-emitting diode in a narrow spectrum centered at 254 nm, a photodetector, and a gas chamber, with dimensions of 85 mm × 25 mm × 35 mm. The performance of the sensor has been meticulously evaluated through simulation and experimental analysis. The sensor’s gas detection accuracy is 750 ppb, with a rapid response time (t90) of 7 s, and a limit of detection of 2.26 ppm. It has the potential to be applied in various fields for ozone monitoring, including the semiconductor industry, water treatment facilities, and environmental research.