Wafer−Scale Growth of Fe−Doped Hexagonal Boron Nitride (hBN) Films via Co−Sputtering

Abstract

Fe−doped hBN film has great potential for use in spintronic applications. The wafer scale preparation of Fe−doped hBN films and their material properties are crucial for application in devices. In this work, Fe−doped films with 2−inch wafer scale were fabricated by magnetron co−sputtering, and the properties of the films were characterized. The crystal quality decreased, but the electrical performance was greatly improved. The average square resistance of Fe−doped film was 0.34 KΩ/sqr. Meanwhile, the Fe−doped films kept the characteristics of hBN well. The wavelength of absorption edge was 216 nm, and the corresponding optical band gap of 5.76 eV.