Characterization of Mechanical Oscillations in Bismuth Selenide Nanowires at Low Temperatures

Abstract

A single transistor preamplifier circuit was designed to facilitate electrical detection of mechanical oscillations in nanoelectromechanical systems (NEMSs) at low temperatures. The amplifier was integrated in the close vicinity of the nanowire inside the cryostat to minimize cabling load and interference. The function of the circuit was impedance conversion for current flow measurements in NEMSs with a high internal resistance. The circuit was tested to operate at temperatures as low as 5 K and demonstrated the ability to detect oscillations in double-clamped bismuth selenide nanowires upon excitation by a 0.1 MHz–10 MHz AC signal applied to a mechanically separated gate electrode. A strong resonance frequency dependency on temperature was observed. A relatively weak shift in the oscillation amplitude and resonance frequency was measured when a DC bias voltage was applied to the gate electrode at a constant temperature.