Performance Signature of the Best Candidate-Graded Bandgap Materials for Solar Cells with Steady-State Conversion Efficiency

Abstract

This is a comprehensive research endeavor focused on enhancing the efficiency of the proposed solar cell design. The integration of the simulation techniques, judicious material selection, and meticulous performance metrics showcase a methodical approach toward creating a solar cell capable of achieving high efficiency across a wide spectrum of light in the AM 1.5 G1 sun solar cell illumination spectrum. Having said this, many researchers are still working on the efficiency potential—based on external radiative efficiency (ERE), open-circuit voltage loss, and fill factor loss—of high-efficiency solar cells. The solar cell is built on aluminum-doped zinc oxide (ZnO) as a transparent conductive oxide layer; aluminum nitride (AlN) as the window layer (emitter); an SWCNT layer as the absorber layer; gallium phosphide (GaP) as the contact layer; and silicon as the substrate. The proposed solar cell transmission, reflection, and absorption relative to the variations in wavelength band spectrum are studied. The conduction and valence band energy diagrams of the solar cell design structure are simulated against the layer thickness variations for the suggested solar cell structure. Short-circuit current density and maximum power variations are clarified versus the bias voltage. Light current density is simulated versus the bias voltage (J/V characteristics curve) of the suggested solar cell design structure. The carrier generation–recombination rate is also simulated by the COMSOL simulation program versus the layer thickness of the suggested solar cell structure. The solar cell circuit design has a fill factor (FF) value of 74.31% and a power conversion efficiency value of 29.91%.