Band-to-Band Transitions in InAs/GaSb Multi-Quantum-Well Structures Using k.p Theory: Effects of Well/Barrier Width and Temperature

Author:

Seyedein Ardebili S. Bahareh1ORCID,Kim Jong Su1ORCID,Ha Jaedu1ORCID,Kang Tae In1ORCID,Zeinalvand Farzin Behnam1ORCID,Kim Yeongho2,Lee Sang Jun2

Affiliation:

1. Department of Physics, Yeungnam University, Gyeongsan 38541, Republic of Korea

2. Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea

Abstract

We investigated the conduction- and valence-confined energy levels and first band-to-band transition energies of a type-II InAs/GaSb multi-quantum-well at 77 K and room temperature for various well and barrier thicknesses. We calculated the electron and hole confined energies based on Kane’s eight-band k.p formalism. We also explored the effect of the barrier width on the wells’ interactions, which was negligible for wells with a width wider than 30 nm. Moreover, we proposed a single exponential function to predict the first transition energies without considering the complex approach of k.p theory. Then, we measured the photoluminescence spectra of the manufactured samples, including thin wells (1, 2, and 3 monolayers) and wide barriers (50 nm). Finally, we made comparisons between the theoretical band-to-band transition energies for kz=0 and experimental results from the photoluminescence spectra for different well thicknesses at 77 and 300 K.

Funder

National Research Foundation of Korea

Ministry of Education

Publisher

MDPI AG

Subject

Energy (miscellaneous),Energy Engineering and Power Technology,Renewable Energy, Sustainability and the Environment,Electrical and Electronic Engineering,Control and Optimization,Engineering (miscellaneous),Building and Construction

Reference51 articles.

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