Affiliation:
1. State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China
2. School of Electronic Science and Engineering, Nanjing University, Nanjing 210096, China
3. School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
Abstract
In this paper, a novel wideband power amplifier (PA) operating in the 2–6 GHz frequency range is presented. The proposed PA design utilizes a combination technique consisting of a distributed equalization technique, multiplexing the power supply network and matching network technique, an LR dissipative structure, and an RC stability network technique to achieve significant bandwidth while maintaining superior gain flatness, high efficiency, high gain, and compact size. For verification, a three-stage PA using the combination technique is designed and implemented in a 0.25 μm GaN high-electron-mobility transistor (HEMT) process. The fabricated prototype demonstrates a saturated output power of 4 W, a power gain of 21 dB, a gain flatness of ±0.6 dB, a power-added efficiency of 39–46%, and a fractional bandwidth of 100% under the operating conditions of drain voltage 28 V (continuous wave) and gate voltage −2.6 V. Moreover, the chip occupies a compact size of only 2.51 mm × 1.97 mm.
Funder
National Key Research and Development Program of China
National Science Foundation (NSFC) for Distinguished Young Scholars of China
National Natural Science Foundation of China
Program of Song Shan Laboratory
111 Project
Jiangsu Province Frontier Leading Technology Basic Research Project
Fundamental Research Funds for the Central Universities
Southeast University—China Mobile Research Institute Joint Innovation Center
Reference16 articles.
1. GaN-based RF power devices and amplifiers;Mishra;Proc. IEEE,2008
2. Research on X band GaN microwave power amplifier;Wei;Internet Things Technol.,2012
3. Design of highly efficient broad-band class-E power amplifier using synthesized low-pass matching networks;Chen;IEEE Trans. Microw. Theory Tech.,2011
4. Zhao, B., Sanabria, C., and Hon, T. (2022, January 19–20). A 2-Stage S-Band 2W CW GaN MMIC Power Amplifier in an Overmold QFN Package. Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, Waco, TX, USA.
5. Distributed clss-J power amplifiers;Alizadeh;IEEE Trans. Microw. Theory Tech.,2017