Femtosecond Laser Percussion Drilling of Silicon Using Repetitive Single Pulse, MHz-, and GHz-Burst Regimes

Author:

Balage Pierre1,Lafargue Manon12,Guilberteau Théo13,Bonamis Guillaume2ORCID,Hönninger Clemens2,Lopez John1,Manek-Hönninger Inka1ORCID

Affiliation:

1. Université de Bordeaux-CNRS-CEA, CELIA UMR 5107, 33405 Talence, France

2. AMPLITUDE, Cité de la Photonique, 33600 Pessac, France

3. ALPhANOV, Rue François Mitterrand, 33400 Talence, France

Abstract

In this contribution, we present novel results on top-down drilling in silicon, the most important semiconductor material, focusing specifically on the influence of the laser parameters. We compare the holes obtained with repetitive single pulses, as well as in different MHz- and GHz-burst regimes. The deepest holes were obtained in GHz-burst mode, where we achieved holes of almost 1 mm depth and 35 µm diameter, which corresponds to an aspect ratio of 27, which is higher than the ones reported so far in the literature, to the best of our knowledge. In addition, we study the influence of the energy repartition within the burst in GHz-burst mode.

Funder

CNRS Innovation

Publisher

MDPI AG

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