Affiliation:
1. Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
2. Division of Electronics Engineering, Jeonbuk National University, Jeonju 54896, Republic of Korea
3. Innovative General Electronic Sensor Technology (i-GEST) Co., Ltd., Pohang 37673, Republic of Korea
Abstract
We investigated the impact of surface treatments on Si-based electrolyte-gated transistors (EGTs) for detecting urea. Three types of EGTs were fabricated with distinct gate electrodes (Ag, Au, Pt) using a top-down method. These EGTs exhibited exceptional intrinsic electrical properties, including a low subthreshold swing of 80 mV/dec, a high on/off current ratio of 106, and negligible hysteresis. Three surface treatment methods ((3-amino-propyl) triethoxysilane (APTES) and glutaraldehyde (GA), 11-mercaptoundecanoic acid (11-MUA), 3-mercaptopropionic acid (3-MPA)) were individually applied to the EGTs with different gate electrodes (Ag, Au, Pt). Gold nanoparticle binding tests were performed to validate the surface functionalization. We compared their detection performance of urea and found that APTES and GA exhibited the most superior detection characteristics, followed by 11-MUA and 3-MPA, regardless of the gate metal. APTES and GA, with the highest pKa among the three surface treatment methods, did not compromise the activity of urease, making it the most suitable surface treatment method for urea sensing.
Funder
Ministry of Science and ICT
Starting Growth Technological R&D Program