Colossal Magnetoresistance in Layered Diluted Magnetic Semiconductor Rb(Zn,Li,Mn)4As3 Single Crystals

Author:

Peng Yi12,Shi Luchuan12,Zhao Guoqiang1,Zhang Jun1,Zhao Jianfa1,Wang Xiancheng1,Deng Zheng12ORCID,Jin Changqing12

Affiliation:

1. Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

2. School of Physics, University of Chinese Academy of Sciences, Beijing 101408, China

Abstract

Diluted magnetic semiconductors (DMSs) with tunable ferromagnetism are among the most promising materials for fabricating spintronic devices. Some DMS systems have sizeable magnetoresistances that can further extend their applications. Here, we report a new DMS Rb(Zn1−x−yLiyMnx)4As3 with a quasi-two-dimensional structure showing sizeable anisotropies in its ferromagnetism and transverse magnetoresistance (MR). With proper charge and spin doping, single crystals of the DMS display Curie temperatures up to 24 K. Analysis of the critical behavior via Arrott plots confirms the long-range ferromagnetic ordering in the Rb(Zn1−x−yLiyMnx)4As3 single crystals. We observed remarkable intrinsic MR effects in the single crystals (i.e., a positive MR of 85% at 0.4 T and a colossal negative MR of −93% at 7 T).

Funder

National Key R&D Program of China

NSF of China

Publisher

MDPI AG

Subject

General Materials Science,General Chemical Engineering

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