Atomic-Resolution Imaging of Micron-Sized Samples Realized by High Magnetic Field Scanning Tunneling Microscopy

Author:

Li Weixuan1,Wang Jihao23,Zhang Jing23,Meng Wenjie23,Xie Caihong23,Hou Yubin23ORCID,Xia Zhigang1,Lu Qingyou2345

Affiliation:

1. College of Metrology and Measurement Engineering, China Jiliang University (CJLU), Hangzhou 310018, China

2. Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China

3. High Magnetic Field Laboratory of Anhui Province, Chinese Academy of Sciences, Hefei 230031, China

4. Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China

5. Hefei Science Center, Chinese Academy of Sciences, Hefei 230031, China

Abstract

Scanning tunneling microscopy (STM) can image material surfaces with atomic resolution, making it a useful tool in the areas of physics and materials. Many materials are synthesized at micron size, especially few-layer materials. Limited by their complex structure, very few STMs are capable of directly positioning and imaging a micron-sized sample with atomic resolution. Traditional STMs are designed to study the material behavior induced by temperature variation, while the physical properties induced by magnetic fields are rarely studied. In this paper, we present the design and construction of an atomic-resolution STM that can operate in a 9 T high magnetic field. More importantly, the homebuilt STM is capable of imaging micron-sized samples. The performance of the STM is demonstrated by high-quality atomic images obtained on a graphite surface, with low drift rates in the X–Y plane and Z direction. The atomic-resolution image obtained on a 32-μm graphite flake illustrates the new STM’s ability of positioning and imaging micron-sized samples. Finally, we present atomic resolution images at a magnetic field range from 0 T to 9 T. The above advantages make our STM a promising tool for investigating the quantum hall effect of micron-sized layered materials.

Funder

the National Key R&D Program of China

National Natural Science Foundation of China

Maintenance and Renovation Project for CAS Major Scientific and Technological Infrastructure

Scientific Instrument Developing Project of the Chinese Academy of Sciences

Hefei Science Center CAS

The Natural Sciences Fund of Zhejiang Province

Science and Technology on Sonar Laboratory

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering

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