Comparative Study of IGBT and SiC MOSFET Three-Phase Inverter: Impact of Parasitic Capacitance on the Output Voltage Distortion

Abstract

This study investigates the nonlinearities in three-phase inverters for SiC-based systems and compares their performance to IGBT-based systems. An analytical model of inverter voltage distortion is developed, which accounts not only for dead time (td), switching delay time, switching frequency (fs), and voltage drops of power devices, but also for output parasitic capacitance (Cout). Experimental tests validate the model, which provides a more accurate estimate of the inverter’s output phase voltage distortion. The power device characteristics are obtained from datasheets, while Cout is determined through experimentation. Three-phase inverters with varying switching frequencies, fundamental frequencies, and dead-time values are used in simulations and experiments to determine the influence of nonlinearity on phase voltage deviation and current distortion. The results show that, due to SiC devices’ faster switching time, the phase voltage deviation and phase current distortion are lower in SiC-based inverters than in IGBT-based ones for high-frequency applications, as the dead time can be reduced.