Frequency-Dependent Grounding Impedance of a Pair of Hemispherical Electrodes: Inductive or Capacitive Behavior?

Author:

Brandão Faria José1ORCID,Fernandes João Pereira2ORCID,Maló Machado Vitor1ORCID,Pedro Maria Eduarda3ORCID

Affiliation:

1. Instituto de Telecomunicações (IT), Instituto Superior Técnico, Universidade de Lisboa, 1049-001 Lisbon, Portugal

2. Instituto de Engenharia Mecânica (IDMEC), Instituto Superior Técnico, Universidade de Lisboa, 1049-001 Lisbon, Portugal

3. Instituto de Engenharia de Sistemas e Computadores (INESC-ID), Instituto Superior Técnico, Universidade de Lisboa, 1049-001 Lisbon, Portugal

Abstract

This article is the authors’ last contribution to a trilogy of research papers submitted to Energies’ Special Issue on Electromagnetic Field Computation, aimed at the theoretical analysis and numerical computation of the frequency-dependent complex impedance of hemispherical electrodes. In this work, we consider a pair of distant identical hemispherical electrodes buried in the ground, whose constitutive parameters (conductivity and permittivity) are assigned diverse values. Simulation experiments carried out using a full-wave finite element method, considering different combinations of the earth’s constitutive parameters, reveal that the grounding impedance of the electrode system can exhibit surprisingly varied frequency behavior. For frequencies close to zero, the impedance can start out inductive or capacitive, then go through a number of resonant transitions between inductive and capacitive states, finally tending towards purely resistive behavior. The results are interpreted using theoretical approximations valid for low- and high-frequency regimes.

Funder

Fundação para a Ciência e Tecnologia

Publisher

MDPI AG

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