Copper Nitride Nanowire Arrays—Comparison of Synthetic Approaches

Abstract

Copper nitride nanowire arrays were synthesized by an ammonolysis reaction of copper oxide precursors grown on copper surfaces in an ammonia solution. The starting Cu films were deposited on a silicon substrate using two different methods: thermal evaporation (30 nm thickness) and electroplating (2 μm thickness). The grown CuO or CuO/Cu(OH)2 architectures were studied in regard to morphology and size, using electron microscopy methods (SEM, TEM). The final shape and composition of the structures were mostly affected by the concentration of the ammonia solution and time of the immersion. Needle-shaped 2–3 μm long nanostructures were formed from the electrodeposited copper films placed in a 0.033 M NH3 solution for 48 h, whereas for the copper films obtained by physical vapor deposition (PVD), well-aligned nano-needles were obtained after 3 h. The phase composition of the films was studied by X-ray diffraction (XRD) and selected area electron diffraction (SAED) analysis, indicating a presence of CuO and Cu(OH)2, as well as Cu residues. Therefore, in order to obtain a pure oxide film, the samples were thermally treated at 120–180 °C, after which the morphology of the structures remained unchanged. In the final stage of this study, Cu3N nanostructures were obtained by an ammonolysis reaction at 310 °C and studied by SEM, TEM, XRD, and spectroscopic methods. The fabricated PVD-derived coatings were also analyzed using a spectroscopic ellipsometry method, in order to calculate dielectric function, band gap and film thickness.