1D Narrow-Bandgap Tin Oxide Materials: Systematic High-Resolution TEM and Raman Analysis

Author:

Manseki Kazuhiro1ORCID,Vafaei Saeid2,Scott Loren2,Hampton Katelyn2,Hattori Nagisa1,Ohira Kosuke1,Prochotsky Kyle2,Jala Stephen3,Sugiura Takashi1

Affiliation:

1. Graduate School of Natural Science and Technology, Gifu University, Yanagido 1-1, Gifu 501-1193, Japan

2. Mechanical Engineering Department, Bradley University, 1501 West Bradley Avenue, Peoria, IL 61625, USA

3. Industrial and Manufacturing Engineering and Technology Department, Bradley University, Peoria, IL 61625, USA

Abstract

We demonstrate for the first time the structure identification and narrow-bandgap property of 1D hybridized SnO/SnO2 nanoparticles derived from the calcination of a single-source precursor, i.e., tin(II) oxalate. Systematic Raman analysis together with high-resolution TEM (HR-TEM) measurements of the tin oxide samples were carried out by changing the calcination temperatures. These data revealed the simultaneous formation of 1D SnO/SnO2 in the rod particles that grew in air. It was also found that Sn(II) can be introduced by changing the concentration of Sn(II) salt in the precursor synthesis and the maximum temperature in calcination. Particles measuring 20~30 nm were sintered to produce tin oxide nanorods including tin monoxide, SnO. Photoabsorption properties associated with the formation of the SnO/SnO2 nanocomposites were also investigated. Tauc plots indicate that the obtained tin oxide samples had a lower bandgap of 2.9~3.0 eV originating from SnO in addition to a higher bandgap of around 3.5~3.7 eV commonly observed for SnO2. Such 1D SnOx/SnO2 hybrids via tin oxalate synthesis with this optical property would benefit new materials design for photoenergy conversion systems, such as photocatalysts.

Funder

Illinois Space Grant Consortium, USA

Research Excellence Program at and a Caterpillar Fellowship from Bradley University, USA

Koshiyama Science & Technology Foundation and CCI holdings Co., Ltd., Japan

Publisher

MDPI AG

Subject

General Materials Science

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