Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer-Reference-Cited by-同舟云学术

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Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer

Published:2013-02-18 Issue:2 Volume:13 Page:2475-2483
ISSN:1424-8220
Container-title:Sensors
language:en
Short-container-title:Sensors

Author:

Currie Marc,Dianat Pouya,Persano Anna,Martucci Maria,Quaranta Fabio,Cola Adriano,Nabet Bahram

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Link

http://www.mdpi.com/1424-8220/13/2/2475/pdf

Reference14 articles.

1. Terahertz technology;Siegel;IEEE Trans. Microwave Theory Tech.,2002

2. Optimization of photomixers and antennas for continuous-wave terahertz emission;Gregory;IEEE J. Quant. Electr.,2005

3. Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures;Gupta;Appl. Phys. Lett.,1991

4. Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy;Warren;Appl. Phys. Lett.,1990

5. Photoconductivity sampling of low-temperature-grown Be-doped GaAs layers

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