Sol-Gel Derived Active Material for Yb Thin-Disk Lasers

Abstract

A ytterbium doped active material for thin-disk laser was developed based on aluminosilicate and phosphosilicate glass matrices containing up to 30 mol% YbO1.5. Thick films and bulk samples were prepared by sol-gel processing. The structural nature of the base material was assessed by X-ray diffraction and Raman spectroscopy and the film morphology was evidenced by scanning electron microscopy. The photoluminescence (PL) properties of different compositions, including emission spectra and lifetimes, were also studied. Er3+ was used as an internal reference to compare the intensities of the Yb3+ PL peaks at ~ 1020 nm. The Yb3+ PL lifetimes were found to vary between 1.0 and 0.5 ms when the Yb concentration increased from 3 to 30 mol%. Based on a figure of merit, the best active material selected was the aluminosilicate glass composition 71 SiO2-14 AlO1.5-15 YbO1.5 (in mol%). An active disk, ~ 36 μm thick, consisting of a Bragg mirror, an aluminosilicate layer doped with 15 mol% Yb and an anti-reflective coating, was fabricated.