Junction Temperature Prediction of Insulated-Gate Bipolar Transistors in Wind Power Systems Based on an Improved Honey Badger Algorithm

Abstract

To reduce carbon dioxide emissions, wind power generation is receiving more attention. The conversion of wind energy into electricity requires frequent use of insulated-gate bipolar transistors (IGBTs). Therefore, it is important to improve their reliability. This study proposed a method to predict the junction temperature of IGBTs, which helps to improve their reliability. Limited by the bad working environment, the physical temperature measurement method proposed by previous research is difficult to apply. Therefore, a junction temperature prediction method based on an extreme learning machine optimized by an improved honey badger algorithm was proposed in this study. First, the data of junction temperature were obtained by the electro-heat coupling model method. Then, the accuracy of the proposed method was verified with the data. The results show that the average absolute error of the proposed method is 0.0303 °C, which is 10.62%, 11.14%, 91.67%, and 95.54% lower than that of the extreme learning machine optimized by a honey badger algorithm, extreme learning machine optimized by a seagull optimization algorithm, extreme learning machine, and back propagation neural network model. Therefore, compared with other models, the proposed method in this paper has higher prediction accuracy.