Self-Adaptation of Oxygen Adsorption and Sub-Surface Junction Formation in Thin Nanometric Sheets of Metal Oxides

Author:

Müller Gerhard1ORCID,Sberveglieri Giorgio2

Affiliation:

1. Department of Applied Sciences and Mechatronics, Munich University of Applied Sciences, D-80335 Munich, Germany

2. Department of Information Engineering, University of Brescia, Via Branze, 38, 25123 Brescia, Italy

Abstract

Oxygen adsorption at metal oxide (MOX) surfaces and the formation of sub-surface depletion zones in thin nanometric sheets of MOX materials are theoretically investigated. It is shown that—under conditions of sufficient oxygen mobility—the bulk thermal generation of oxygen vacancy donors and the adsorption of surface oxygen ions cooperate in a self-organizing manner to form narrow sub-surface depletion zones which optimally fit into the limited spaces of MOX layers with nanometric cross sections. With this self-organization process in place, both the oxygen adsorption at free surfaces and the bulk generation of oxygen vacancy donors continuously increases as the MOX sheet thickness L is reduced, maintaining at the same time overall electro-neutrality and a state of perfect volume depletion of free carriers in bulk. This process comes to an end when MOX sheet thicknesses of L ≈ 1 nm are approached and when 3d-volumes of about 1 nm3 contain only one single double-donor and two surface oxygen ions on average. It is argued that at this limit of miniaturization, different interpretations of MOX gas sensing phenomena might be required than on larger length scales.

Publisher

MDPI AG

Subject

Physical and Theoretical Chemistry,Analytical Chemistry

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3