Affiliation:
1. Department of Mathematical Sciences, Indian Institute of Technology (BHU), Varanasi 221005, India
2. Computing & Information Sciences, St Francis University, Hong Kong, China
3. Department of Civil and Architectural Engineering, City University of Hong Kong, Hong Kong, China
Abstract
Diffusion equations play a crucial role in various scientific and technological domains, including mathematical biology, physics, electrical engineering, and mathematics. This article presents a new formulation of the diffusion equation in the context of electrical engineering. Specifically, the behaviour of the physical quantity of charge carriers (such as concentration) is examined within semiconductor materials. The primary focus of this work is to solve the two-dimensional, time-fractional, nonlinear drift reaction–diffusion equation by applying an appropriate numerical scheme. In recent years, researchers working on nonlinear diffusion equations have proposed several numerical methods, with the shifted airfoil collocation method being one such efficient technique for solving nonlinear partial differential equations. This collocation approach effectively reduces the considered two-dimensional, time-fractional, nonlinear drift reaction–diffusion equation to a system of algebraic equations. The efficiency and effectiveness of the proposed method are validated through an error analysis, comparing the exact solution and the proposed numerical solution for a specific form of the considered mathematical model. The variations in the concentration of charge carriers, driven by the effects of drift and reaction terms, are displayed graphically as the system transitions from a fractional order to an integer order.
Funder
Hong Kong Research Council
Board of Research in Nuclear Sciences (BRNS), BARC, Government of India