A Novel Model of Semiconductor Porosity Medium According to Photo-Thermoelasticity Excitation with Initial Stress

Abstract

Investigated is a novel model in the photo-thermoelasticity theory that takes into account the impact of porosity and initial stress. A generalized photo-thermoelastic that is initially stressed and has voids is taken into consideration for the general plane strain problem. The solutions for the fundamental variables in two dimensions are obtained using the Laplace–Fourier transforms method in two dimensions (2D). Physical fields such as temperature, carrier concentration, normal displacement, and change in volume fraction field can all be solved analytically. The plasma of electrons, thermal load, and mechanical boundary conditions at the porosity medium’s free surface are used to show certain illustrations. The context of the Laplace–Fourier transformation inversion operations yields complete solutions. To complete the numerical simulation and compare several thermal memories under the influence of the porosity parameters, silicon (Si), a semiconductor porosity material, is used. The main physical variables are described and graphically displayed with the new parameters.