Author:
Chen Yang,Zhao Xiaomeng,Li Zhongxu,Ke Xinjian,Wang Chengli,Zhou Min,Li Wenqin,Huang Kai,Ou Xin
Abstract
Hybrid integration of silicon photonics with lithium niobate (LN) devices provides a promising route to enable an excellent modulation performance in silicon photonic integrated circuits. To realize this purpose, a substrate containing a Si film on an LNOI substrate, called Si on the LNOI structure, was analyzed and fabricated. The mode propagation properties in the Si-on-LNOI structure were simulated in detail and a vertical adiabatic coupler (VAC) between the Si waveguide and LN waveguide was simulated to help in the determination of the dimension of this structure. A 4-inch wafer-scale Si on an LNOI hybrid structure was fabricated through the ion-cut process. This structure has a single-crystalline quality, high thickness uniformity, smooth surface, and sharp bonding interface, which are practical for realizing low loss and high coupling efficiency.
Funder
National Key Research and Development of China
the National Natural Science Foundation of China
Science and Technology Commission of Shanghai Municipality
Key Research Project of Zhejiang Laboratory
Subject
Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering
Cited by
3 articles.
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