Electronic and Optical Properties of Finite Gallium Sulfide Nano Ribbons: A First-Principles Study

Abstract

The electronic and optical properties of finite GaS nanoribbons are investigated using density functional theory calculations. The effect of size, edge termination, and chemical modification by doping and edge passivation are taken into account. The dynamical stability is confirmed by the positive vibration frequency from infrared spectra; further, the positive binding energies ensure the stable formation of the considered nanoribbons. Accurate control of the energy gap has been achieved. For instance, in armchair nanoribbons, energy gaps ranging from ~ 1 to 4 eV were obtained in varying sizes. Moreover, the energy gap can be increased by up to 5.98 eV through edge passivation with F-atoms or decreased to 0.98 eV through doping with Si-atoms. The density of states shows that the occupied molecular orbitals are dominated by S-atoms orbitals, while unoccupied ones are mostly contributed to by Ga orbitals. Thus, S-atoms will be the electron donor sites, and Ga-atoms will be the electron acceptors in the interactions that the nanoribbons might undergo. The nature of electron–hole interactions in the excited states was investigated using various indices, such as electron–hole overlapping, charge–transfer length, and hole–electron Coulomb attraction energy. The UV-Vis absorption spectra reveal a redshift by increasing the size in the armchair or the zigzag directions. Chemical functionalization shows a significant influence on the absorption spectra, where a redshift or blueshift can be achieved depending on the dopant or the attached element.