Research on Secondary Recrystallization Mechanism of Oriented Silicon Steel

Abstract

Based on the understanding that the essence of secondary recrystallization of Goss texture is to restrain the abnormal growth of {110}<112>, {210}<001> and partial Goss texture {110}<225>, it was concluded that making sharp Goss grow up becomes the only choice. It was proposed that the abnormal growth mechanism of Goss texture was the result of selective generation, directed inheritance, and selective growth. The mechanism explained that the Goss texture was the most easily formed shear texture. In directed inheritance, the Goss texture was required to be highly compatible with the near-constant of the second-phase particle inhibition force, providing an optimal environment for the abnormal growth of the Goss texture by controlling the inhibition force near-constant. The control of the near-constant inhibition force provides an optimal environment for the abnormal growth of the Goss texture. Based on that, the process technology for producing low-temperature nitrided-oriented silicon steels and steel products was successfully developed.