Dynamic Simulation of the Temperature Field of LiH Single Crystal Growth

Author:

Jiang Yingwu12,Xie Donghua23,Wu Jiliang2,Li Huan24,Zhu Jipeng2,Ni Muyi1ORCID,Gao Tao4,Ye Xiaoqiu2

Affiliation:

1. Sino-French Institute of Nuclear Engineering & Technology, Sun Yat-sen University, Zhuhai 519082, China

2. Science and Technology on Surface Physics and Chemistry Laboratory, Mianyang 621908, China

3. Institute of Materials, China Academy of Engineering Physics, Mianyang 621900, China

4. Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610000, China

Abstract

The single-crystal lithium hydride (LiH) generally grows in a gradient temperature region with the Bridgman method. A stable and appropriate temperature gradient is crucial in the crystallization process. In this paper, the temperature variation of single-crystal LiH growth is calculated by the finite element method (FEM). It is shown that the LiH compact melted entirely after heating to 750 °C at 10 °C/min in a dual-temperature furnace and holding for 2.4 h. The crystallization margin was 46.5 °C after holding for 5 h. The crystallization margin of LiH at the cone point, respectively, decreased to 33.7 °C, 28.6 °C, 25.6 °C, and 16.5 °C when the upper furnace was maintained at 750 °C, and lower furnace was cooled to 680 °C, 650 °C, 630 °C, and 550 °C, respectively. The optimal conditions for obtaining large size and high-quality LiH single crystals were predicted to be 630 °C at a lower-temperature-zone, 200 mL/min (cooling water flux), and 20 mm/h rise rate of the furnace. Based on the parameters of the above simulation, we synthesized LiH single crystal. X-ray diffraction (XRD) patterns showed that the LiH single crystal exhibited a (2 0 0) crystallographic plane at 44.5° with good chemical stability in air.

Funder

Science and Technology on Surface Physics and Chemistry Laboratory, China

Magnetic Confinement fusion Energy Research Project

Publisher

MDPI AG

Subject

Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering

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