Nitrogen-Doped Graphene Quantum Dot–Tin Dioxide Nanocomposite Ultrathin Films as Efficient Electron Transport Layers for Planar Perovskite Solar Cells

Abstract

Tin dioxide (SnO2) has recently been recognized as an excellent electron transport layer (ETL) for perovskite solar cells (PSCs) due to its advantageous properties, such as its high electron mobility, suitable energy band alignment, simple low-temperature process, and good chemical stability. In this work, nitrogen-doped graphene quantum dots (N-GQDs) were prepared using a hydrothermal method and then used to fabricate N-GQD:SnO2 nanocomposite ultrathin films. N-GQD:SnO2 nanocomposite ultrathin films were investigated and applied as electron transport layers in planar PSCs. The presence of N-GQDs with an average size of 6.2 nm in the nanocomposite improved its morphology and reduced surface defects. The excitation–emission contour map indicated that the N-GQDs exhibited a remarkably enhanced light-harvesting capability due to the possibility of absorbing UV light and producing emissions in the visible range. The quenching of photoluminescence spectra showed that the N-GQDs in nanocomposite ultrathin films improved electron extraction and reduced charge recombination. As a result, the power conversion efficiency (PCE) of our planar PSCs fabricated with the optimized N-GQD:SnO2 nanocomposite electron transport layer was improved by 20.4% over pristine SnO2-based devices.