Crystal Structure, Raman Spectroscopy and Optical Property Study of Mg-Doped SnO2 Compounds for Optoelectronic Devices

Author:

Singha K. K.1,Singh P. P.2ORCID,Narzary R.1,Mondal A.3ORCID,Gupta M.4,Sathe V. G.4,Kumar D.4,Srivastava S. K.1ORCID

Affiliation:

1. Department of Physics, Central Institute of Technology Kokrajhar, Kokrajhar 783370, India

2. Department of Computer Science and Engineering, Central Institute of Technology Kokrajhar, Kokrajhar 783370, India

3. Department of Chemistry, Central Institute of Technology Kokrajhar, Kokrajhar 783370, India

4. UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, India

Abstract

Researchers have been consistently looking for new materials that can be integrated in optoelectronic and spintronic devices. In this research, we investigated the crystalline structure, Raman, and optical characteristics of Mg-doped SnO2 compounds. The solid-state reaction technique was utilized to produce polycrystalline samples of Sn1−xMgxO2 (0 ≤ x ≤ 0.10) for their potential use in optoelectronics devices. It was discovered that all the compounds were synthesized into a tetragonal rutile-type structure of SnO2. The analysis of these samples using Raman spectroscopy provided more evidence, supporting the creation of the tetragonal rutile phase of SnO2 and the successful integration of Mg ions in SnO2. The measurements of the optical properties, such as absorbance and transmittance, carried out with a UV-Vis spectrophotometer demonstrated that the optical band gap widened with the increase in the magnesium doping concentration in SnO2. In addition, it was noticed that increasing the quantity of magnesium doping concentration led to an increase in the transmittance value from 83% to 91%.

Funder

UGC-DAE CSR through a Collaborative Research Scheme

UGC-DAE CSR

CIT Kokrajhar

Publisher

MDPI AG

Subject

Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering

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