Use of Digital Image Correlation (DIC) to Improve the Critical Strain-Annealing (CSA) Method for Producing Large Crystals: Application to A1050 Commercially Pure Aluminum

Author:

Haddadi Halim12,Tran Hoang-Son23,Franciosi Patrick2

Affiliation:

1. Laboratoire PIMM, Arts et Metiers Institute of Technology, CNRS, Cnam, HESAM Universite, 151 Boulevard de l’Hopital, 75013 Paris, France

2. CNRS-LSPM, UPR3407, Université Paris 13, Institut Galilée, 99, Avenue J.-B Clément, 93430 Villetaneuse, France

3. Urban and Environmental Engineering, Materials and Solid Mechanics, University of Liège, Quartier Polytech-1, Allée de la Découverte 9 (B52), B-4000 Liège, Belgium

Abstract

The aim of this work is to present an efficient procedure for growing large metallic single crystals that associates a classical growth technique (namely, the critical strain-annealing—CSA—method) with advanced methods of accurate full-field strain measurements based on digital image correlation (DIC) technique and of sample geometry design using finite element analysis. Measuring the critical plastic strains with an accuracy better than 0.1% resulted in a significantly improved construction of the recrystallization diagram. Applying this “DIC-assisted CSA method” to an A1050 commercially pure aluminum allowed obtaining in less than two days (26 h to 30 h) large multi-crystal samples with a half dozen of large grains. Their length between 35 mm and 100 mm was in full agreement with the obtained recrystallization diagram.

Publisher

MDPI AG

Subject

Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering

Reference30 articles.

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